ELECTRICAL PROPERTIES OF HEAVILY DOPED N-TYPE INDIUM ANTIMONIDE

被引：5

作者：

DASHEVSKII, MY

FILIPCHENKO, AS

OKUN, LS

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1971年 / 5卷 / 03期

关键词：

D O I：

10.1002/pssa.2210050308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：597 / +

页数：1

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[10] ALLOYS OF INSB WITH INTE IN2 TE3 AND TELLURIUM [J].

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