SULFUR DONOR LEVEL ASSOCIATED WITH (100) CONDUCTION BAND OF GASB

被引：41

作者：

KOSICKI, BB

PAUL, W

STRAUSS, AJ

ISELER, GW

机构：

来源：

PHYSICAL REVIEW LETTERS | 1966年 / 17卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.17.1175

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1175 / &

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共 14 条

[1] EVIDENCE FOR A SELENIUM DONOR LEVEL ABOVE PRINCIPAL CONDUCTION BAND EDGE IN GASB
BATE, RT
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[2] ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE
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[3] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS
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[4] EVIDENCE FOR IMPURITY STATES ASSOCIATED WITH HIGH-ENERGY CONDUCTION-BAND EXTREMA IN N-CDTE
FOYT, AG
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PAUL, W
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (02) : 55 - &
[5] EFFECT OF DONOR IMPURITIES ON DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) - (S SE AND TE DOPING - EFFECT ON JUNCTION LASER WAVELENGTH - E/T)
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SIRKIS, MD
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (04) : 83 - &
[6] HUTSON AR, TO BE PUBLISHED
[7] EVIDENCE FOR QUASILOCALIZED STATES ASSOCIATED WITH HIGH-ENERGY CONDUCTION-BAND MINIMA IN SEMICONDUCTORS PARTICULARLY SE-DOPED GASB
KOSICKI, BB
PAUL, W
[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (05) : 246 - &
[8] KOSICKI BB, UNPUBLISHED
[9] HALL-EFFECT MEASUREMENTS OF N-TYPE GALLIUM PHOSPHIDE
MONTGOME.HC
FELDMANN, WL
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3228 - &
[10] BAND STRUCTURE OF INTERMETALLIC SEMICONDUCTORS FROM PRESSURE EXPERIMENTS
PAUL, W
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2082 - &