NITROGEN AND POTENTIAL NORMAL-TYPE DOPANTS IN DIAMOND

被引:311
作者
KAJIHARA, SA [1 ]
ANTONELLI, A [1 ]
BERNHOLC, J [1 ]
CAR, R [1 ]
机构
[1] SCUOLA INT SUPER STUDI AVANZATI, I-34014 TRIESTE, ITALY
关键词
D O I
10.1103/PhysRevLett.66.2010
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Potential n-type dopants in diamond are investigated via ab initio methods. The well-known distortions around the deep donor N are found to arise from the interaction of the N lone pair with a C dangling bond. P, Li, and Na are all shallow dopants, but their solubilities are much too low for doping via in-diffusion. Li is a relatively fast diffuser, Na is stable up to moderate temperatures, while P should remain immobile even at high temperatures. Na, being an interstitial dopant, is particularly suitable for ion implantation, since there is no need to displace host atoms.
引用
收藏
页码:2010 / 2013
页数:4
相关论文
共 35 条
[1]  
AMMERLAAN CAJ, 1981, I PHYS C SER, V59, P81
[2]   LINEAR-COMBINATION-OF-ATOMIC-ORBITALS, SELF-CONSISTENT-FIELD METHOD FOR THE DETERMINATION OF THE ELECTRONIC-STRUCTURE OF DEEP LEVELS IN SEMICONDUCTORS [J].
ASTIER, M ;
POTTIER, N ;
BOURGOIN, JC .
PHYSICAL REVIEW B, 1979, 19 (10) :5265-5276
[3]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[4]   DEFECTS IN DIAMOND - THE UNRELAXED VACANCY AND SUBSTITUTIONAL NITROGEN [J].
BACHELET, GB ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (08) :4736-4744
[5]   MEAN-VALUE POINT IN BRILLOUIN ZONE [J].
BALDERESCHI, A .
PHYSICAL REVIEW B, 1973, 7 (12) :5212-5215
[6]  
BENHOLC J, 1988, PHYS REV LETT, V61, P2689
[7]   BORON CONCENTRATION AND IMPURITY-TO-BAND ACTIVATION-ENERGY IN DIAMOND [J].
BOURGOIN, JC ;
KRYNICKI, J ;
BLANCHARD, B .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (01) :293-298
[8]   PSEUDOPOTENTIAL CALCULATIONS OF EFFECT OF DISPLACEMENT UPON IMPURITY LEVELS INTRODUCED BY DEEP DONOR OXYGEN IN GAAS, GAP, SI AND NITROGEN IN DIAMOND [J].
BRAND, S ;
JAROS, M .
SOLID STATE COMMUNICATIONS, 1977, 21 (09) :875-877
[9]   DAMAGE AND LATTICE LOCATION STUDIES IN HIGH-TEMPERATURE ION-IMPLANTED DIAMOND [J].
BRAUNSTEIN, G ;
KALISH, R .
APPLIED PHYSICS LETTERS, 1981, 38 (06) :416-418
[10]   UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J].
CAR, R ;
PARRINELLO, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (22) :2471-2474