THEORETICAL-STUDY OF ELECTRON-TRANSPORT AND CHARGE CONTROL IN IN0.52AL0.48AS/IN0.53GA0.47AS/INP - APPLICATION TO HEMTS REALIZATION

被引：4

作者：

BOUREL, P

THOBEL, JL

BELLAHSNI, K

PERNISEK, M

FAUQUEMBERGUE, R

机构：

来源：

JOURNAL DE PHYSIQUE III | 1991年 / 1卷 / 04期

关键词：

D O I：

10.1051/jp3:1991135

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The purpose of this work is to study the AlInAs/GaInAs system and its applications to HEMT devices. First a Monte-Carlo method has been used to compute the transport parameters of InGaAs and InAlAs lattice matched to InP, and values of diffusion coefficients for these materials are reported for the first time. Then the charge control in InAlAs/InGaAs/InAlAs double heterostructure has been investigated by mean of 1D model, and the influence of technological parameters is discussed. Finally a realistic device has been studied using a two-dimensional Monte-Carlo simulation. The main physical phenomena involved in the device's behaviour are described, and electrical characteristics are presented.

引用

页码：511 / 520

页数：10

共 18 条

[1] ELECTRON MOBILITIES OF ALLNAS AND ALLNAS/INP HETEROSTRUCTURES [J].

AINA, L ;

MATTINGLY, M .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5253-5255

[2]

CAPPY A, 1986, THESIS LILLE

[3] DIFFUSION AND THE POWER SPECTRAL DENSITY AND CORRELATION-FUNCTION OF VELOCITY FLUCTUATION FOR ELECTRONS IN SI AND GAAS BY MONTE-CARLO METHODS [J].

FAUQUEMBERGUE, R ;

ZIMMERMANN, J ;

KASZYNSKI, A ;

CONSTANT, E ;

MICROONDES, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1065-1071

[4]

HO P, 1988, IEEE IEDM, V88, P184

[5]

HOCKNEY RW, 1985, COMPUT PHYS COMMUN, V36, P25

[6]

HONG WP, 1987, IEEE T ELECTRON DEV, V34, P1491, DOI 10.1109/T-ED.1987.23110

[7]

Itoh T., 1985, Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.85CH2173-3), P92

[8] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[9] MOCVD GROWTH OF SELECTIVELY DOPED ALLNAS/GALNAS HETEROSTRUCTURES AND ITS APPLICATION TO HIFETS (HETEROINTERFACE FETS) [J].

KAMADA, M ;

ISHIKAWA, H ;

IKEDA, M ;

MORI, Y ;

KOJIMA, C .

ELECTRONICS LETTERS, 1986, 22 (21) :1147-1148

[10]

KAMADA M, 1988, IEEE IEDM, V88, P180

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