ELECTRON MOBILITIES OF ALLNAS AND ALLNAS/INP HETEROSTRUCTURES

被引：6

作者：

AINA, L

MATTINGLY, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5253 / 5255

页数：3

共 9 条

[1] HIGH MOBILITY, SELECTIVELY DOPED INP GAINAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

AINA, L ;

MATTINGLY, M ;

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[2] HIGH-QUALITY INALAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

AINA, L ;

MATTINGLY, M .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1637-1639

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CHO, AY ;

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[7] NONRANDOM ALLOYING IN IN0.52AL0.48AS/INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

HONG, WP ;

BHATTACHARYA, PK ;

SINGH, J .

APPLIED PHYSICS LETTERS, 1987, 50 (10) :618-620

[8] THE GROWTH OF HIGH MOBILITY INGAAS AND INAIAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].

LEE, W ;

FONSTAD, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :536-538

[9] ELECTRICAL-PROPERTIES OF UNDOPED AND SI-DOPED AL0.48IN0.52AS GROWN BY LIQUID-PHASE EPITAXY [J].

TANAHASHI, T ;

NAKAJIMA, K ;

YAMAGUCHI, A ;

UMEBU, I .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1030-1032

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