METALORGANIC CHEMICAL VAPOR-DEPOSITION OF UNDOPED IN1-XALXAS ON INP

被引：12

作者：

DIFORTEPOISSON, MA

RAZEGHI, M

DUCHEMIN, JP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.331956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：7187 / 7189

页数：3

相关论文

共 6 条

[1] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
WAGNER, WR
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6328 - 6330
[2] SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4411 - 4415
[3] NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE
DUCHEMIN, JP
BONNET, M
KOELSCH, F
HUYGHE, D
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 181 - 186
[4] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE
OHNO, H
BARNARD, J
WOOD, CEC
EASTMAN, LF
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (08): : 154 - 155
[5] GALNAS-ALLNAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
OHNO, H
WOOD, CEC
RATHBUN, L
MORGAN, DV
WICKS, GW
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4033 - 4037
[6] CONDUCTION BANDS IN INL-XALXP
ONTON, A
CHICOTKA, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4205 - &