HIGH-QUALITY INALAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引:22
作者
AINA, L
MATTINGLY, M
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10.1063/1.98580
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O59 [应用物理学];
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页码:1637 / 1639
页数:3
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  • [1] PHOTOLUMINESCENCE CHARACTERIZATION OF SINGLE HETEROJUNCTION QUANTUM-WELL STRUCTURES
    AINA, O
    MATTINGLY, M
    JUAN, FY
    BHATTACHARYA, PK
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 43 - 45
  • [2] A STUDY OF ALLOY SCATTERING IN GA1-XALXAS
    CHANDRA, A
    EASTMAN, LF
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2669 - 2677
  • [3] THE GROWTH AND CHARACTERIZATION OF NOMINALLY UNDOPED AL1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY
    DAVIES, GJ
    KERR, T
    TUPPEN, CG
    WAKEFIELD, B
    ANDREWS, DA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 219 - 223
  • [4] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF UNDOPED IN1-XALXAS ON INP
    DIFORTEPOISSON, MA
    RAZEGHI, M
    DUCHEMIN, JP
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7187 - 7189
  • [5] MATERIAL PROPERTIES AND CLUSTERING IN MOLECULAR-BEAM EPITAXIAL IN0.52AL0.48AS AND IN1-X-YGAXALYAS
    HONG, WP
    CHIN, A
    DEBBAR, N
    HINCKLEY, J
    BHATTACHARYA, PK
    SINGH, J
    CLARKE, RC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 800 - 801
  • [6] KAMADA M, 1986, I PHYS C SER, V83, P575
  • [7] PENG CK, 1987, IEEE ELECTRON DEVICE, V8, P23
  • [8] ELECTRICAL-PROPERTIES OF UNDOPED AND SI-DOPED AL0.48IN0.52AS GROWN BY LIQUID-PHASE EPITAXY
    TANAHASHI, T
    NAKAJIMA, K
    YAMAGUCHI, A
    UMEBU, I
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1030 - 1032
  • [9] EFFECTS OF THE GROWTH-CONDITIONS ON DEEP LEVEL CONCENTRATION IN MOCVD GAAS
    WATANABE, MO
    TANAKA, A
    NAKANISI, T
    ZOHTA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L429 - L432