ELECTRICAL-PROPERTIES OF UNDOPED AND SI-DOPED AL0.48IN0.52AS GROWN BY LIQUID-PHASE EPITAXY

被引：18

作者：

TANAHASHI, T

NAKAJIMA, K

YAMAGUCHI, A

UMEBU, I

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.94218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1030 / 1032

页数：3

共 12 条

[1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[2] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6328-6330

[3] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY ;

DRUMMOND, TJ ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :147-149

[4]

LORENZ MR, 1970, 10 P INT C PHYS SEM, P444

[5] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED AL0.48IN0.52AS ON INP [J].

NAKAJIMA, K ;

TANAHASHI, T ;

AKITA, K .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :194-196

[6] LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY IN1-XGAXAS AND INP ON (100) AND (111)B FACES [J].

NAKAJIMA, K ;

YAMAZAKI, S ;

TAKANOHASHI, T ;

AKITA, K .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :572-582

[7] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

BARNARD, J ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :154-155

[8] GALNAS-ALLNAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

OHNO, H ;

WOOD, CEC ;

RATHBUN, L ;

MORGAN, DV ;

WICKS, GW ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4033-4037

[9]

STANLEY CR, 1983, 1982 P C GAAS REL CO, P173

[10] AL0.48IN0.52AS-GA0.47IN0.53AS-AL0.48IN0.52AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65-MU-M [J].

TSANG, WT .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3861-3864

← 1 2 →