LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED AL0.48IN0.52AS ON INP

被引：20

作者：

NAKAJIMA, K

TANAHASHI, T

AKITA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 02期

关键词：

D O I：

10.1063/1.93459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：194 / 196

页数：3

共 8 条

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CHO, AY ;

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APPLIED PHYSICS LETTERS, 1981, 39 (08) :607-609

[2]

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[3]

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[4]

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[5] PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES [J].

NAKAJIMA, K ;

KUSUNOKI, T ;

AKITA, K ;

KOTANI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) :123-127

[6] CALCULATION OF THE AL-GA-IN-AS PHASE-DIAGRAM AND LPE GROWTH OF ALXGAYIN1-X-YAS ON INP [J].

NAKAJIMA, K ;

AKITA, K .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) :232-238

[7] COMPOSITION DEPENDENCE OF THE BAND-GAPS OF IN1-XGAXAS1-YPY QUATERNARY SOLIDS LATTICE MATCHED ON INP SUBSTRATES [J].

NAKAJIMA, K ;

YAMAGUCHI, A ;

AKITA, K ;

KOTANI, T .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5944-5950

[8]

Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39

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