LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY IN1-XGAXAS AND INP ON (100) AND (111)B FACES

被引：19

作者：

NAKAJIMA, K

YAMAZAKI, S

TAKANOHASHI, T

AKITA, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 59卷 / 03期

关键词：

D O I：

10.1016/0022-0248(82)90381-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：572 / 582

页数：11

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共 22 条

[1] EFFECT OF SUBSTRATE ORIENTATION ON ELECTRICAL-PROPERTIES OF LPE-GROWN INP
AKITA, K
YAMAGUCHI, A
NAKAJIMA, K
TAKANOHASHI, T
[J]. ELECTRONICS LETTERS, 1981, 17 (24) : 921 - 922
[2] EFFECT OF BAKING TEMPERATURE ON PURITY OF LPE GA0.47IN0.53AS
AMANO, T
TAKAHEI, K
NAGAI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : 2105 - 2109
[3] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
ASTLES, MG
SMITH, FGH
WILLIAMS, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1750 - 1757
[4] INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS
BAUMANN, GG
BENZ, KW
PILKUHN, MH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1232 - 1235
[5] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN
GIESECKE, G
PFISTER, H
[J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371
[6] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS
GREENE, PD
WHEELER, SA
ADAMS, AR
ELSABBAHY, AN
AHMAD, CN
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 78 - 80
[7] LIQUID-PHASE EPITAXIAL-GROWTH OF INP AND INGAASP ALLOYS
GROVES, SH
PLONKO, MC
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 81 - 87
[8] GROVES SH, 1979, I PHYS C SER, V45, P71
[9] LIQUID-PHASE EPITAXY OF INP
HESS, K
STATH, N
BENZ, KW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1208 - 1212
[10] GROWTH OF INP BY INFINITE SOLUTION LPE
HOLMES, DE
KAMATH, GS
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 51 - 58