EFFECTS OF THE GROWTH-CONDITIONS ON DEEP LEVEL CONCENTRATION IN MOCVD GAAS

被引：37

作者：

WATANABE, MO ^{[1
]}

TANAKA, A ^{[1
]}

NAKANISI, T ^{[1
]}

ZOHTA, Y ^{[1
]}

机构：

[1] TOSHIBA CORP,TOSHIBA ELECTR EQUIP DIV,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 06期

关键词：

D O I：

10.1143/JJAP.20.L429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L429 / L432

页数：4

共 15 条

[1] TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS
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KU, JW
OWEN, SJT
AEBI, V
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MOON, RL
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 304 - 306
[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
[3] NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE
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BONNET, M
KOELSCH, F
HUYGHE, D
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 181 - 186
[4] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468
[5] DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS
GLOVER, GH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 138 - &
[6] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS
HASEGAWA, F
MAJERFELD, A
[J]. ELECTRONICS LETTERS, 1975, 11 (14) : 286 - 288
[7] ANALYSES OF TRANSIENT CAPACITANCE EXPERIMENTS FOR AU-GAAS SCHOTTKY-BARRIER DIODES IN PRESENCE OF DEEP IMPURITIES AND INTERFACIAL LAYER
HUANG, CI
LI, SS
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1481 - 1486
[8] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS
HUBER, AM
LINH, NT
VALLADON, M
DEBRUN, JL
MARTIN, GM
MITONNEAU, A
MIRCEA, A
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026
[9] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY
LANG, DV
LOGAN, RA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066
[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

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