TRANSMISSIVE-MODE SILICON FIELD-EMISSION ARRAY PHOTOEMITTER

被引：16

作者：

THOMAS, RN

NATHANSON, HC

机构：

来源：

关键词：

D O I：

10.1063/1.1654424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：387 / +

页数：1

共 6 条

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BELL, RL ;

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[3] PHOTO-FIELD-EMISSION FROM HIGH-RESISTANCE SILICON AND GERMANIUM [J].

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YATSENKO, AF ;

MIROSHNICHENKO, LS .

PHYSICA STATUS SOLIDI, 1966, 14 (02) :403-+

[4] INFRARED ABSORPTION OF SILICON NEAR THE LATTICE EDGE [J].

MACFARLANE, GG ;

ROBERTS, V .

PHYSICAL REVIEW, 1955, 98 (06) :1865-1866

[5]

Pomerantz DI., 1968, Patent No. [US3397278 A, 3397278, US3397278A]

[6] PHOTOSENSITIVE FIELD-EMISSION FROM SILICON POINT ARRAYS [J].

THOMAS, RN ;

NATHANSON, HC .