PHOTOSENSITIVE FIELD-EMISSION FROM SILICON POINT ARRAYS

被引：31

作者：

THOMAS, RN

NATHANSON, HC

机构：

来源：

关键词：

D O I：

10.1063/1.1654423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：384 / +

页数：1

共 9 条

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[3] ARTHUR JR, 1968, 28 PHYS EL C MINN
[4] GENERAL FEATURES OF FIELD EMISSION FROM SEMICONDUCTORS
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[5] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +
[6] PHOTO-FIELD-EMISSION FROM HIGH-RESISTANCE SILICON AND GERMANIUM
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[J]. PHYSICA STATUS SOLIDI, 1966, 14 (02): : 403 - +
[7] BUSCH GV, 1962, HELV PHYS ACTA, V35, P494
[8] Elinson MI, 1965, RADIOTEKH ELEKTRON, V10, P1288
[9] THEORY OF FIELD EMISSION FROM SEMICONDUCTORS
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[J]. PHYSICAL REVIEW, 1962, 125 (01): : 67 - &