HIGH-T-C EDGE-GEOMETRY SNS WEAK LINKS ON SILICON-ON-SAPPHIRE SUBSTRATES

被引：23

作者：

HUNT, BD

FOOTE, MC

PIKE, WT

BARNER, JB

VASQUEZ, RP

机构：

[1] Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena

来源：

PHYSICA C | 1994年 / 230卷 / 1-2期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0921-4534(94)90456-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality superconductor/normal-metal/superconductor (SNS) edge-geometry weak links have been produced on silicon-on-sapphire (SOS) substrates using a new SrTiO3/''seed-layer''/cubic-zirconia (YSZ) buffer system. The seed layer is a thin YBa2Cu3O7-x (YBCO) or PrBa2Cu3O7-x (PBCO) film, which provides a template for growth of the SrTiO3. This multilayer buffer system eliminates problems with series grain-boundary weak links seen in edge junctions on single YSZ buffer layers on SOS, while the use of moderate-dielectric-constant SOS substrates should benefit high-frequency applications and enable integration with silicon circuitry. SNS weak links fabricated on SOS with PBCO and Co doped YBCO normal-metal layers exhibit current-voltage characteristics qualitatively consistent with the resistively shunted junction model, with modulating AC Josephson steps and operation to temperatures above 77 K. These are the first reported epitaxial edge-geometry SNS devices on SOS substrates.

引用

页码：141 / 152

页数：12

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