ANOMALY OF LINEAR AND QUADRATIC ZEEMAN EFFECT OF AN EFFECTIVE-MASS ACCEPTOR - C IN GAAS

被引：38

作者：

BIMBERG, D

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.18.1794

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1794 / 1799

页数：6

共 27 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709

[3]

BEBB HB, 1972, SEMICONDUCTORS SEMIM, V8

[4] NOVEL PHENOMENA IN DONOR BOUND EXCITONS IN GALLIUM-PHOSPHIDE [J].

BIMBERG, D ;

DEAN, PJ ;

MANSFIELD, F .

JOURNAL OF LUMINESCENCE, 1976, 12 (01) :271-276

[5] POTENTIAL-DEPENDENT ELECTRON AND HOLE G-VALUES AND QUENCHED DIAMAGNETISM IN GAP .2. APPLICATION OF THEORY OF FREE AND BOUND HOLES IN A MAGNETIC-FIELD TO PSEUDO-ACCEPTORS (D0,X) [J].

BIMBERG, D ;

DEAN, PJ .

PHYSICAL REVIEW B, 1977, 15 (08) :3917-3927

[6]

BIMBERG D, 1977, ADV SOLID STATE PHYS, V17, P195

[7]

BIMBERG D, UNPUBLISHED

[8]

BIMBERG D, 1974, J PHYS PARIS C, V35, P215

[9]

BIMBERG D, 1975, C INT CNRS, V242, P211

[10]

BIMBERG D, 1974, 12TH P INT C PHYS SE, P561

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