A MODEL FOR HIGH-TEMPERATURE GROWTH OF CDTE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

A simple kinetic model for the metallorganic chemical vapor deposition (MOCVD) growth of binary epilayers, denoted by AB, is presented. The model yields the growth rate as a function of the gas-phase concentrations of the constituents, in various limiting cases. The model is corroborated with experimental results obtained by the MOCVD growth of CdTe at 480-degrees-C. The transition temperature between the surface-reaction and the gas-phase mass-transfer control region is shifted to higher temperature with reduced reactor pressure and increased total flow velocity.