A STUDY OF TRANSPORT AND PYROLYSIS IN THE GROWTH OF CDXHG1-XTE BY MOVPE

被引：35

作者：

IRVINE, SJC

TUNNICLIFFE, J

MULLIN, JB

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 65卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(83)90090-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：479 / 484

页数：6

相关论文

共 9 条

[1] EPITAXIAL-GROWTH OF HGTE BY A MOVPE PROCESS
IRVINE, SJC
MULLIN, JB
ROYLE, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (01) : 15 - 20
[2] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE
IRVINE, SJC
MULLIN, JB
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 107 - 115
[3] A STUDY OF THE GROWTH OF HGTE FROM THE VAPOR
IRVINE, SJC
MULLIN, JB
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 53 (03) : 458 - 468
[4] LOW-TEMPERATURE CVD GROWTH OF EPITAXIAL HGTE ON CDTE
KUECH, TF
MCCALDIN, JO
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1142 - 1144
[5] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
VEENVLIET, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153
[6] VAPOR-PHASE EPITAXY OF CDXHG1-XTE USING ORGANOMETALLICS
MULLIN, JB
IRVINE, SJC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (09) : L149 - L151
[7] THE GROWTH OF CDXHG1-XTE USING ORGANOMETALLICS
MULLIN, JB
IRVINE, SJC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 178 - 181
[8] CRYSTAL-GROWTH AND CHARACTERIZATION OF CADMIUM TELLURIDE - A MODIFIED SOLVENT EVAPORATION TECHNIQUE
MULLIN, JB
JONES, CA
STRAUGHAN, BW
ROYLE, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 135 - 142
[9] ORGANOMETALLIC GROWTH OF II-VI-COMPOUNDS
MULLIN, JB
IRVINE, SJC
ASHEN, DJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 92 - 106