CRYSTAL-GROWTH AND CHARACTERIZATION OF CADMIUM TELLURIDE - A MODIFIED SOLVENT EVAPORATION TECHNIQUE

被引:8
作者
MULLIN, JB
JONES, CA
STRAUGHAN, BW
ROYLE, A
机构
关键词
D O I
10.1016/0022-0248(82)90314-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:135 / 142
页数:8
相关论文
共 14 条
[1]   Growth Striations in Vertically Pulled Oxide and Fluoride Single Crystals [J].
Cockayne, B. ;
Gates, M. P. .
JOURNAL OF MATERIALS SCIENCE, 1967, 2 (02) :118-123
[2]  
JORDAN AS, 1970, METALL TRANS, V1, P239
[3]   CALCULATION OF P-T DIAGRAMS OF CDTE [J].
JORDAN, AS ;
ZUPP, RR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) :1285-&
[4]   DEFECT STRUCTURE OF CDTE [J].
KROGER, FA .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :205-210
[5]   PHASE EQUILIBRIA IN SYSTEM CD-TE [J].
LORENZ, MR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) :939-&
[6]   GROWTH OF CADMIUM TELLURIDE BY SOLVENT EVAPORATION [J].
LUNN, B ;
BETTRIDGE, V .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :151-154
[7]   MODELS OF DONOR IMPURITY COMPENSATION IN CADMIUM TELLURIDE [J].
MARFAING, Y .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :211-217
[8]   MELT-GROWTH AND CHARACTERIZATION OF CADMIUM TELLURIDE [J].
MULLIN, JB ;
STRAUGHAN, BW .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :105-115
[9]   ACTIVATION-ENERGY ANALYSIS OF DEFECT LEVELS IN SEMI-INSULATING CDTE DETECTOR MATERIAL [J].
PANDE, KP ;
ROBERTS, GG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (05) :2017-2020
[10]   ELECTRICAL-PROPERTIES OF CDTE-CL [J].
PETTY, MC ;
DHARMADASA, IM ;
ROBERTS, GG .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (10) :1899-1909