FIELD-DEPENDENCE OF THE LOW-TEMPERATURE QUANTUM EFFICIENCY, MOBILITY AND (MU-TAU) - PRODUCT IN A-SI-H

被引：8

作者：

JUSKA, G ^{[1
]}

ARLAUSKAS, K ^{[1
]}

KLIMA, O ^{[1
]}

KOCKA, J ^{[1
]}

机构：

[1] INST PHYS, CS-16200 PRAGUE 6, CZECHOSLOVAKIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80142-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

On a unique sandwich structure formed by selfsupporting a-Si:H layer, placed between two Mylar foils, we have succeeded in separating the field dependence of the mobility-lifetime (mu-tau) product and quantum efficiency beta(F). We have found that beta almost-equal-to 1 for 40 K < T < 300 K and this leads to the reinterpretation of the conflicting results, concerning low T mobility, photoconductivity and geminate recombination.

引用

页码：411 / 414

页数：4

共 6 条

[1] NONLINEAR PHOTOCARRIER DRIFT IN HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS
ANTONIADIS, H
SCHIFF, EA
[J]. PHYSICAL REVIEW B, 1991, 43 (17): : 13957 - 13966
[2] ELECTRON-DRIFT MOBILITY IN A-SI-H UNDER EXTREMELY HIGH ELECTRIC-FIELD
JUSKA, G
KOCKA, J
ARLAUSKAS, K
JUKONIS, G
[J]. SOLID STATE COMMUNICATIONS, 1990, 75 (06) : 531 - 533
[3] JUSKA G, 1990, LIETUVOS FIZIKOS RIN, V30, P180
[4] KOCKA J, 1990, 20TH P ICPS THESS, V3, P2059
[5] ELECTRON-DRIFT MOBILITY IN AMORPHOUS SI-H
MARSHALL, JM
STREET, RA
THOMPSON, MJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01): : 51 - 60
[6] SPEAR WE, 1989, AMORPHOUS SILICON B, V1, P721

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