HIGH-QUALITY GAINAS PHOTODIODES GROWN USING TERTIARYBUTYLARSINE BY ATMOSPHERIC-PRESSURE MOVPE

被引:7
作者
BAKER, DM
DUNCAN, WJ
LEARMOUTH, MD
LYNCH, TG
机构
关键词
D O I
10.1049/el:19891073
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1598 / 1600
页数:3
相关论文
共 4 条
[1]   METALORGANIC CHEMICAL VAPOR-DEPOSITION OF HIGH-PURITY GAAS USING TERTIARYBUTYLARSINE [J].
HAACKE, G ;
WATKINS, SP ;
BURKHARD, H .
APPLIED PHYSICS LETTERS, 1989, 54 (20) :2029-2031
[2]  
LEARMOUTH MD, COMMUNICATION
[3]   HIGHLY RELIABLE PLANAR GALNAS/INP PHOTODIODES WITH HIGH-YIELD MADE BY ATMOSPHERIC-PRESSURE MOVPE [J].
ROBERTSON, MJ ;
RITCHIE, S ;
SARGOOD, SK ;
NELSON, AW ;
DAVIS, L ;
WALLING, RH ;
SKRIMSHIRE, CP ;
SUTHERLAND, RR .
ELECTRONICS LETTERS, 1988, 24 (05) :252-254
[4]   NON-HYDRIDE GROUP-V SOURCES FOR OMVPE [J].
STRINGFELLOW, GB .
JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) :327-335