HIGHLY RELIABLE PLANAR GALNAS/INP PHOTODIODES WITH HIGH-YIELD MADE BY ATMOSPHERIC-PRESSURE MOVPE

被引：8

作者：

ROBERTSON, MJ

RITCHIE, S

SARGOOD, SK

NELSON, AW

DAVIS, L

WALLING, RH

SKRIMSHIRE, CP

SUTHERLAND, RR

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 05期

关键词：

D O I：

10.1049/el:19880169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：252 / 254

页数：3

相关论文

共 2 条

[1] HIGH-PERFORMANCE, LONG WAVELENGTH OPTOELECTRONIC COMPONENTS BY ATMOSPHERIC-PRESSURE MOVPE [J].

NELSON, AW ;

COLE, S ;

WONG, S ;

HARLOW, MJ ;

DEVLIN, WJ ;

WAKE, D ;

RODGERS, PM ;

ROBERTSON, MJ .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :579-590

[2] GAINAS PIN PHOTODIODES GROWN BY ATMOSPHERIC-PRESSURE MOVPE [J].

NELSON, AW ;

WONG, S ;

RITCHIE, S ;

SARGOOD, SK .

ELECTRONICS LETTERS, 1985, 21 (19) :838-840