GAINAS PIN PHOTODIODES GROWN BY ATMOSPHERIC-PRESSURE MOVPE

[1] VAPOR-PHASE HETERO-EPITAXY - GROWTH OF GAINAS LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (03) : 591 - 604

[2] LOW DARK CURRENT INGAAS PIN PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1985, 21 (04) : 139 - 140

[3] GOEBEL EO, 1982, GAINASP ALLOY SEMICO, P313

[4] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 232 - 238

[5] Moss R. H., 1983, British Telecom Technology Journal, V1, P7

[6] LOW-LEAKAGE, HIGH-EFFICIENCY, RELIABLE VPE INGAAS 1.0-1.7 MU-M PHOTO-DIODES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (09): : 217 - 219

[7] POULAIN P, 1984, UNPUB IEEE J QUANTUM

[8] EXPERIMENTAL COMPARISON OF A GERMANIUM AVALANCHE PHOTO-DIODE AND INGAAS PINFET RECEIVER FOR LONGER WAVELENGTH OPTICAL COMMUNICATION-SYSTEMS [J]. ELECTRONICS LETTERS, 1982, 18 (11) : 453 - 454

[1] VAPOR-PHASE HETERO-EPITAXY - GROWTH OF GAINAS LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (03) : 591 - 604

[2] LOW DARK CURRENT INGAAS PIN PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1985, 21 (04) : 139 - 140

[3] GOEBEL EO, 1982, GAINASP ALLOY SEMICO, P313

[4] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 232 - 238

[5] Moss R. H., 1983, British Telecom Technology Journal, V1, P7

[6] LOW-LEAKAGE, HIGH-EFFICIENCY, RELIABLE VPE INGAAS 1.0-1.7 MU-M PHOTO-DIODES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (09): : 217 - 219

[7] POULAIN P, 1984, UNPUB IEEE J QUANTUM

[8] EXPERIMENTAL COMPARISON OF A GERMANIUM AVALANCHE PHOTO-DIODE AND INGAAS PINFET RECEIVER FOR LONGER WAVELENGTH OPTICAL COMMUNICATION-SYSTEMS [J]. ELECTRONICS LETTERS, 1982, 18 (11) : 453 - 454