EFFECT OF NEUTRON IRRADIATION ON TRAPATT DIODE

被引：4

作者：

CHAFFIN, RJ

EERNISSE, EP

HOOD, JA

机构：

[1] Sandia Laboratories, Albuquerque

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 11期

关键词：

D O I：

10.1109/PROC.1969.7462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements have been made of neutron irradiation effects on the trapped plasma avalanche triggered transit (TRAPATT) microwave device. Results show that for levels up to 1015 neutrons/cm2 (energy>10 keV) there is little change in the diode RF parameters. The observed degradation above this level is described. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：2063 / &

共 7 条

[1] CHAFFIN RJ, 1969, IEEE T MICROWAVE THE, VMT17, P119
[2] HOEFFLINGER B, 1967, IEEE T ELECTRON DEVI, VED14, P563
[3] HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY
JOHNSTON, RL
SCHARFET.DL
BARTELIN.DJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1611 - +
[4] LEVINE PA, 1969, FEB INT SOL STAT CIR, P84
[5] STACKED HIGH-POWER AVALANCHE-DIODE OSCILLATORS
LIU, SG
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (04) : 707 - +
[6] SCHARFETTER DL, 1969, IEEE T ELECTRON DEVI, VED16, P64
[7] WILSON DK, 1968, IEEE T NUCL SCI, VNS15, P114

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