HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY

被引：80

作者：

JOHNSTON, RL

SCHARFET.DL

BARTELIN.DJ

机构：

[1] Bell Telephone Laboratories, Inc., Murray Hill, N.J.

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 09期

关键词：

D O I：

10.1109/PROC.1968.6672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulsed operation of Ge avalanche diodes has produced oscillations with efficiencies exceeding 40 percent at frequencies of 2–3 GHz. Computer simulation of diode and circuit behavior has provided an explanation for the observed results. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1611 / +

页数：1

共 8 条

[1] CIRCUIT FOR TESTING HIGH-EFFICIENCY IMPATT DIODES
IGLESIAS, DE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11): : 2065 - &
[2] HIGH-EFFICIENCY CW IMPATT OPERATION
IGLESIAS, DE
EVANS, WJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1610 - +
[3] JOHNSTON RL, 1968, JUN IEEE SOL DEV RES
[4] HIGH-POWER HIGH-EFFICIENCY SILICON AVALANCHE DIODES AT ULTRA HIGH FREQUENCIES
PRAGER, HJ
CHANG, KKN
WEISBROD, S
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04): : 586 - +
[5] IMPROVED PERFORMANCE OF IMPATT DIODES FABRICATED FROM GE
RULISON, RL
GIBBONS, G
JOSENHANS, JG
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (02): : 223 - +
[6] SCHARFETTER DL, TO BE PUBLISHED
[7] SCHARFETTER DL, 1968, JUN IEEE SOL DEV RES
[8] IMPATT OSCILLATOR PERFORMANCE IMPROVEMENT WITH SECOND-HARMONIC TUNING
SWAN, CB
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1616 - &

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