HIGH-EFFICIENCY CW IMPATT OPERATION

被引：30

作者：

IGLESIAS, DE

EVANS, WJ

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 09期

关键词：

D O I：

10.1109/PROC.1968.6671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1610 / +

页数：1

共 4 条

[1] CIRCUIT FOR TESTING HIGH-EFFICIENCY IMPATT DIODES
IGLESIAS, DE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11): : 2065 - &
[2] HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY
JOHNSTON, RL
SCHARFET.DL
BARTELIN.DJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1611 - +
[3] HIGH-POWER HIGH-EFFICIENCY SILICON AVALANCHE DIODES AT ULTRA HIGH FREQUENCIES
PRAGER, HJ
CHANG, KKN
WEISBROD, S
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04): : 586 - +
[4] IMPATT OSCILLATOR PERFORMANCE IMPROVEMENT WITH SECOND-HARMONIC TUNING
SWAN, CB
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1616 - &