MULTIPLICATION OF MISFIT DISLOCATIONS IN EPITAXIAL LAYERS

被引：96

作者：

BEANLAND, R

机构：

[1] Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3BX

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 09期

关键词：

D O I：

10.1063/1.352257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conditions for operation of two multiplication mechanisms in strained layers are analyzed. These are spiral and Fran k -Read type sources. It is shown that a minimum thickness is required for their operation, of the order of four times the critical thickness for the bending over of threading dislocations. The implications for strain relief of mismatched layers are discussed.

引用

收藏

页码：4031 / 4035

页数：5

相关论文

共 18 条

[1]

ALEXANDER H, 1968, SOLID STATE PHYSICS, V22

[2]

[Anonymous], 1968, THEORY DISLOCATIONS

[3] STRAIN RELAXATION IN SI1-XGEX LAYERS ON SI(001) [J].

CAPANO, MA ;

HART, L ;

BOWEN, DK ;

GORDONSMITH, D ;

THOMAS, CR ;

GIBBINGS, CJ ;

HALLIWELL, MAG ;

HOBBS, LW .

JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) :260-270

[4] ON THE ORIGIN OF MISFIT DISLOCATIONS IN INGAAS/GAAS STRAINED LAYERS [J].

DIXON, RH ;

GOODHEW, PJ .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3163-3168

[5] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327

[6] NON-NEWTONIAN STRAIN RELAXATION IN HIGHLY STRAINED SIGE HETEROSTRUCTURES [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2498-2500

[7] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J].

FIORY, AT ;

BEAN, JC ;

HULL, R ;

NAKAHARA, S .

PHYSICAL REVIEW B, 1985, 31 (06) :4063-4065

[8] NUCLEATION MECHANISMS AND THE ELIMINATION OF MISFIT DISLOCATIONS AT MISMATCHED INTERFACES BY REDUCTION IN GROWTH AREA [J].

FITZGERALD, EA ;

WATSON, GP ;

PROANO, RE ;

AST, DG ;

KIRCHNER, PD ;

PETTIT, GD ;

WOODALL, JM .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2220-2237

[9]

Frank F., 1950, S PLASTIC DEFORMATIO, P89

[10] NEW TYPE OF SOURCE GENERATING MISFIT DISLOCATIONS [J].

HAGEN, W ;

STRUNK, H .

APPLIED PHYSICS, 1978, 17 (01) :85-87