NON-NEWTONIAN STRAIN RELAXATION IN HIGHLY STRAINED SIGE HETEROSTRUCTURES

[1] ALEXANDER H, 1968, SOLID STATE PHYS, V22, P28

[2] Bean Jesse S, COMMUNICATION

[3] DISLOCATION VELOCITY-MEASUREMENTS IN SEMIINSULATING IN-DOPED GAAS [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1987, 56 (05) : 173 - 178

[4] NATURE OF MISFIT DISLOCATION SOURCES IN STRAINED-LAYER SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (05) : 394 - 396

[5] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[6] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[7] DODSON BW, IN PRESS PHYS REV B

[8] SELF-INTERSTITIALS AND VACANCIES IN ELEMENTAL SEMICONDUCTORS BETWEEN ABSOLUTE-ZERO AND THE TEMPERATURE OF MELTING [J]. FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1981, 21 : 221 - 242

[9] FROST HJ, 1982, DEFORMATION MECHANIS

[10] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379

[1] ALEXANDER H, 1968, SOLID STATE PHYS, V22, P28

[2] Bean Jesse S, COMMUNICATION

[3] DISLOCATION VELOCITY-MEASUREMENTS IN SEMIINSULATING IN-DOPED GAAS [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1987, 56 (05) : 173 - 178

[4] NATURE OF MISFIT DISLOCATION SOURCES IN STRAINED-LAYER SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (05) : 394 - 396

[5] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[6] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[7] DODSON BW, IN PRESS PHYS REV B

[8] SELF-INTERSTITIALS AND VACANCIES IN ELEMENTAL SEMICONDUCTORS BETWEEN ABSOLUTE-ZERO AND THE TEMPERATURE OF MELTING [J]. FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1981, 21 : 221 - 242

[9] FROST HJ, 1982, DEFORMATION MECHANIS

[10] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379