THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .3. THE SIH4-HCL-H2 SYSTEM AT LOW-TEMPERATURES

被引：33

作者：

CLAASSEN, WAP

BLOEM, J

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 06期

关键词：

D O I：

10.1149/1.2127635

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1353 / 1359

页数：7

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[1] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .1. THE SIH4-HCL-H2 SYSTEM
BLOEM, J
CLAASSEN, WAP
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (03) : 435 - 444
[2] BLOEM J, 1978, CURRENT TOPICS MATER, V1, pCH4
[3] BOLLEN LJM, UNPUBLISHED
[4] NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES
CLAASSEN, WAP
BLOEM, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 194 - 202
[5] THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .2. THE SIH2CL2-H2-N2 SYSTEM
CLAASSEN, WAP
BLOEM, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1836 - 1843
[6] CLAASSEN WAP, UNPUBLISHED
[7] CULLEN GW, 1977, SEMICONDUCTOR SILICO
[8] LAWRENKO WA, 1978, Z PHYS CHEM-LEIPZIG, V259, P129
[9] ADSORPTION OF HCL AND HBR ON SI(111) - AES, ELS, AND EID STUDIES
MIYAMURA, M
SAKISAKA, Y
NISHIJIMA, M
ONCHI, M
[J]. SURFACE SCIENCE, 1978, 72 (02) : 243 - 252
[10] REACTIVE SILICA .5. SORPTION OF H2, O2, CO, AND REACTION-MECHANISMS
MORTERRA, C
LOW, MJD
[J]. JOURNAL OF CATALYSIS, 1973, 28 (02) : 265 - 274