RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .1. THE SIH4-HCL-H2 SYSTEM

被引：49

作者：

BLOEM, J

CLAASSEN, WAP

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 49卷 / 03期

关键词：

D O I：

10.1016/0022-0248(80)90117-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：435 / 444

页数：10

相关论文

共 17 条

[1] EQUILIBRIUM AND KINETICS IN CHEMICAL VAPOR-DEPOSITION OF SILICON
BLOEM, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 256 - 263
[2] HIGH CHEMICAL VAPOR-DEPOSITION RATES OF EPITAXIAL SILICON LAYERS
BLOEM, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1973, 18 (01) : 70 - 76
[3] BLOEM J, 1978, CURRENT TOPICS MATER, V1, pCH4
[4] BLOEM J, UNPUBLISHED
[5] SURFACE MORPHOLOGY OF EPITAXIAL SILICON
BURMEISTER, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) : 131 - +
[6] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
BURTON, WK
CABRERA, N
FRANK, FC
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
[7] THEORETICAL-ANALYSIS OF EQUILIBRIUM ADSORPTION LAYERS IN CVD SYSTEMS (SI-H-CL, GA-AS-H-CL)
CHERNOV, AA
RUSAIKIN, MP
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 73 - 81
[8] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION
CHERNOV, AA
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 55 - 76
[9] VAPOR-PHASE POLISHING OF SILICON WITH H2-HBR GAS MIXTURES
GREGOR, LV
BALK, P
CAMPAGNA, FJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (04) : 327 - &
[10] SILICON EPITAXIAL-GROWTH
NISHIZAWA, JI
TERASAKI, T
SHIMBO, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +