RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .1. THE SIH4-HCL-H2 SYSTEM

被引：49

作者：

BLOEM, J

CLAASSEN, WAP

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 49卷 / 03期

关键词：

D O I：

10.1016/0022-0248(80)90117-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：435 / 444

页数：10

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