SURFACE MORPHOLOGY OF HCL ETCHED SILICON WAFERS .1. GAS-PHASE COMPOSITION IN SILICON HCL SYSTEM AND SURFACE-REACTIONS DURING ETCHING

被引：61

作者：

VANDERPUTTE, P ^{[1
]}

GILING, LJ ^{[1
]}

BLOEM, J ^{[1
]}

机构：

[1] CATHOLIC UNIV NIJMEGEN,RIM,DEPT SOLID STATE CHEM,NIJMEGEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 41卷 / 01期

关键词：

D O I：

10.1016/0022-0248(77)90106-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：133 / 145

页数：13

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