THE EFFECT OF STRAIN ON THE BAND-STRUCTURE OF GAAS AND IN0.2GA0.8AS

被引：1

作者：

HWANG, J

SHIH, CK

PIANETTA, P

KUBIAK, GD

STULEN, RH

DAWSON, LR

PAO, YC

HARRIS, JS

机构：

[1] SANDIA NATL LABS,LIVERMORE,CA 94550

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[3] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575699

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1348 / 1349

页数：2

共 4 条

[1] ELECTRONIC-PROPERTIES OF STRAINED-LAYER SUPER-LATTICES [J].

OSBOURN, GC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :379-382

[2] AXIAL CHANNELING STUDIES OF STRAINED-LAYER SUPERLATTICES .2. RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS [J].

PICRAUX, ST ;

DAWSON, LR ;

OSBOURN, GC ;

CHU, WK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :57-62

[3] STRAIN-MEASUREMENTS BY CHANNELING ANGULAR SCANS [J].

PICRAUX, ST ;

DAWSON, LR ;

OSBOURN, GC ;

BIEFELD, RM ;

CHU, WK .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1020-1022

[4] ION CHANNELING STUDIES OF INGAAS GAAS STRAINED-LAYER SUPER-LATTICES [J].

PICRAUX, ST ;

DAWSON, LR ;

OSBOURN, GC ;

CHU, WK .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :930-932

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