ION CHANNELING STUDIES OF INGAAS GAAS STRAINED-LAYER SUPER-LATTICES

被引：49

作者：

PICRAUX, ST ^{[1
]}

DAWSON, LR ^{[1
]}

OSBOURN, GC ^{[1
]}

CHU, WK ^{[1
]}

机构：

[1] UNIV N CAROLINA, CHAPEL HILL, NC 27514 USA

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 10期

关键词：

D O I：

10.1063/1.94184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：930 / 932

页数：3

共 11 条

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ESAKI, L .

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[5]

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5206-5213

[7]

FRITZ IJ, 1983, GALLIUM ARSENIDE REL, P241

[8] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :265-273

[9] A GAASXP1-X-GAP STRAINED-LAYER SUPER-LATTICE [J].

OSBOURN, GC ;

BIEFELD, RM ;

GOURLEY, PL .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :172-174

[10] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J].

OSBOURN, GC .

PHYSICAL REVIEW B, 1983, 27 (08) :5126-5128

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