INTERSUBBAND INFRARED-ABSORPTION IN GEXSI1-X/SI SUPERLATTICE BY PHOTOCURRENT MEASUREMENT

被引：20

作者：

KARUNASIRI, RPG ^{[1
]}

PARK, JS ^{[1
]}

WANG, KL ^{[1
]}

CHENG, LJ ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期

关键词：

D O I：

10.1063/1.102508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intersubband infrared absorption of holes in a GexSi 1-x /Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first to the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.

引用

页码：1342 / 1344

页数：3

共 16 条

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