HIGH-SPEED CHARACTERIZATION OF A MONOLITHICALLY INTEGRATED GAAS ALGAAS QUANTUM-WELL LASER-DETECTOR

The high frequency response of a GaAs-AlGaAs edge-illuminated photodiode monolithically integrated with a single quantum well laser and resistor network has been measured and simulated. The measured response of the monitor diode to a step impulse applied to the laser exhibits a nonoptically induced precursor pulse. Simulations show this interference arises primarily from mutual inductive coupling between on-chip wiring and wirebond connections. If the coupling is eliminated, simulations show the risetime of the laser-detector combination is around 575 ps. Although these coupling effects are not intrinsic problems, this work demonstrates the importance of including packaging parasitics and on-chip wiring interactions in OEIC data link design.