THE SUPERIORITY OF OPTOELECTRONIC INTEGRATION FOR HIGH-SPEED LASER DIODE MODULATION

被引：12

作者：

NAKAMURA, M

SUZUKI, N

OZEKI, T

机构：

[1] Toshiba Research & Development, Cent, Kawasaki, Jpn, Toshiba Research & Development Cent, Kawasaki, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 06期

关键词：

INTEGRATED OPTOELECTRONICS - LASER DIODES - MESFETS - METAL-SEMICONDUCTOR FIELD-EFECT TRANSISTORS - SPICE SIMULATION PROGRAM;

D O I：

10.1109/JQE.1986.1073065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：822 / 826

页数：5

共 14 条

[1]

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[8] DIRECT MODULATION OF SEMICONDUCTOR-LASERS AT F GREATER-THAN 10 GHZ BY LOW-TEMPERATURE OPERATION [J].

LAU, KY ;

HARDER, C ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :273-275

[9] IMPEDANCE CHARACTERISTICS OF DOUBLE-HETERO STRUCTURE LASER-DIODES [J].

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[10]

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