ELECTRODE MODIFICATION BY THE SOL-GEL METHOD

Silica gel films prepared by the sol-gel route were used to modify platinum and transparent indium oxide electrodes. The silicon dioxide layer reduces electron transfer to the electrode but, due to the porous structure of the silica gel, does not completely prevent it. The tris(2,2'-bipyridyl)ruthenium(II) cation is incorporated into the gel layer, and the cation retains electrochemical and photoelectrochemical activity. The comparison of electrochemical and photochemical data was used to evaluate attachment of the ruthenium complex to the silica gel matrix.