NEGATIVE CONDUCTANCE AND SEQUENTIAL TUNNELING IN AMORPHOUS-SILICON SILICON-CARBIDE DOUBLE BARRIER DEVICES

被引：6

作者：

PEREYRA, I ^{[1
]}

CARRENO, MP ^{[1
]}

ALVAREZ, F ^{[1
]}

机构：

[1] UNIV CAMPINAS,INST FIS,CAMPINAS,SP,BRAZIL

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 110卷 / 2-3期

关键词：

D O I：

10.1016/0022-3093(89)90254-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：175 / 178

页数：4

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