LOW-TEMPERATURE ELECTRON-TRANSPORT NEAR THE MOBILITY EDGE OF AMORPHOUS-SILICON

被引：43

作者：

CLOUDE, C

SPEAR, WE

LECOMBER, PG

HOURD, AC

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 04期

关键词：

D O I：

10.1080/13642818608239026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：L113 / L118

页数：6

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