DETERMINATION OF THE EXTENDED-STATE ELECTRON-MOBILITY IN A-SI

被引：58

作者：

HOURD, AC

SPEAR, WE

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 51卷 / 02期

关键词：

D O I：

10.1080/13642818508240550

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L13 / L18

页数：6

共 11 条

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[9] THE INVESTIGATION OF EXCESS CARRIER LIFETIMES IN AMORPHOUS-SILICON BY TRANSIENT METHODS [J].

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[10] THE STUDY OF TRANSPORT AND RELATED PROPERTIES OF AMORPHOUS-SILICON BY TRANSIENT EXPERIMENTS [J].

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