THE STUDY OF TRANSPORT AND RELATED PROPERTIES OF AMORPHOUS-SILICON BY TRANSIENT EXPERIMENTS

被引：132

作者：

SPEAR, WE

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90514-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1 / 14

页数：14

共 43 条

[1] CAPTURE CROSS-SECTION AND DENSITY OF DEEP GAP STATES IN A-SIHX SCHOTTKY-BARRIER STRUCTURES [J].

ABELES, B ;

WRONSKI, CR ;

GOLDSTEIN, Y ;

CODY, GD .

SOLID STATE COMMUNICATIONS, 1982, 41 (03) :251-253

[2] HOLE DRIFT MOBILITY IN AMORPHOUS SILICON [J].

ALLAN, D .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :381-392

[3]

ALLAN D, 1977, 7TH P INT C AM LIQ S, P323

[4] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712

[5]

DERSCH H, 1983, IN PRESS

[6]

DJAMDJI F, UNPUB

[7] SECONDARY GRAIN-BOUNDARY DISLOCATIONS IN [001] TWIST BOUNDARIES IN MGO .2. EXTRINSIC STRUCTURES [J].

SUN, CP ;

BALLUFFI, RW .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (01) :63-73

[8] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].

HAYNES, JR ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (05) :835-843

[9]

JANES D, 1981, AIP C P, V73, P222

[10] CARRIER PROPAGATION IN SPUTTERED A-SI-H [J].

KIRBY, PB ;

PAUL, W .

PHYSICAL REVIEW B, 1982, 25 (08) :5373-5383

← 1 2 3 4 5 →