SHALLOW-ACCEPTOR, DONOR, FREE-EXCITON, AND BOUND-EXCITON STATES IN HIGH-PURITY ZINC TELLURIDE

被引：157

作者：

VENGHAUS, H ^{[1
]}

DEAN, PJ ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.21.1596

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1596 / 1609

页数：14

共 48 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
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[4] BEHAVIOR OF COPPER IN ZNTE - SEM-CL AND PL
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[5] EXCITON LOCALIZATION AT IMPURITY PAIRS IN ZINC TELLURIDE AND INDIUM-PHOSPHIDE
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[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1351 - 1355
[6] NATURE OF PREDOMINANT ACCEPTORS IN HIGH-QUALITY ZINC TELLURIDE
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[J]. JOURNAL OF LUMINESCENCE, 1978, 16 (04) : 363 - 394
[7] OBSERVATION OF OPTICAL PHONONS BOUND TO NEUTRAL DONORS
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[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (15) : 1027 - &
[8] CONDUCTION-BAND-TO-ACCEPTOR MAGNETO-LUMINESCENCE IN ZINC TELLURIDE
DEAN, PJ
VENGHAUS, H
SIMMONDS, PE
[J]. PHYSICAL REVIEW B, 1978, 18 (12): : 6813 - 6823
[9] COPPER, THE DOMINANT ACCEPTOR IN REFINED, UNDOPED ZINC TELLURIDE
DEAN, PJ
[J]. JOURNAL OF LUMINESCENCE, 1979, 21 (01) : 75 - 83
[10] BOUND-EXCITON ABSORPTION IN SI=AL, SI=GA, AND SI=IN
ELLIOTT, KR
OSBOURN, GC
SMITH, DL
MCGILL, TC
[J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1808 - 1815

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