INFLUENCE OF WET AND DRY AMBIENTS ON FAST SURFACE STATES OF GERMANIUM

被引：16

作者：

MARGONINSKI, Y

FARNSWORTH, HE

机构：

来源：

PHYSICAL REVIEW | 1961年 / 123卷 / 01期

关键词：

D O I：

10.1103/PhysRev.123.135

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：135 / &

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[1] BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[2] DORDA G, 1960, ICSP
[3] EXCESS SURFACE CURRENTS ON GERMANIUM AND SILICON DIODES
ERIKSEN, WT
STATZ, H
DEMARS, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (01) : 133 - 139
[4] FLIETNER H, 1959, ANN PHYSIK, V3, P414
[5] THE EFFECT OF SOME SURFACE TREATMENTS ON THE CHARACTERISTICS OF FAST STATES ON GERMANIUM SURFACES
HARNIK, E
MARGONINSKI, Y
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 96 - 99
[6] BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS
JAMES, HM
GINZBARG, AS
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 840 - 848
[7] OBSERVATION OF THE DRIFT OF GERMANIUM SURFACE BY FIELD EFFECT EXPERIMENT
KIKUCHI, M
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (04) : 436 - 436
[8] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
KINGSTON, RH
NEUSTADTER, SF
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720
[9] A MECHANISM FOR WATER INDUCED EXCESS REVERSE DARK CURRENT ON GROWN GERMANIUM N-P JUNCTIONS
LAW, JT
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (09): : 1367 - 1370
[10] LITOVCHENKO VG, 1960, SOV PHYS-SOL STATE, V1, P1470