GAP-STATE DISTRIBUTION IN NORMAL-TYPE AND PARA-TYPE A-SI-H FROM OPTICAL-ABSORPTION

被引：47

作者：

PIERZ, K

HILGENBERG, B

MELL, H

WEISER, G

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90014-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：63 / 66

页数：4

共 10 条

[1]

ADLER D, 1984, AIP C P, V120, P70

[2] DENSITY OF GAP-STATES IN N-TYPE AND P-TYPE A-SI-H [J].

BEICHLER, J ;

MELL, H ;

WEBER, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :257-260

[3] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION [J].

JACKSON, WB ;

AMER, NM ;

BOCCARA, AC ;

FOURNIER, D .

APPLIED OPTICS, 1981, 20 (08) :1333-1344

[4] THE DENSITY OF STATES IN UNDOPED AND DOPED AMORPHOUS HYDROGENATED SILICON [J].

KOCKA, J .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) :91-98

[5] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J].

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1986, 57 (23) :2979-2982

[6] SUBBANDGAP ABSORPTION IN A-SI-H FROM PHOTOCONDUCTIVITY SPECTRA [J].

PIERZ, K ;

MELL, H ;

TERUKOV, J .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :547-550

[7] INFLUENCE OF DOPING ON THE OPTICAL-PROPERTIES AND ON THE COVALENT BONDS IN PLASMA DEPOSITED AMORPHOUS-SILICON [J].

RISTEIN, J ;

WEISER, G .

SOLAR ENERGY MATERIALS, 1985, 12 (03) :221-232

[8] DOPANT STATES IN A-SI-H .3. TRIPLY COORDINATED BORON [J].

ROBERTSON, J .

PHYSICAL REVIEW B, 1983, 28 (08) :4666-4670

[9] PAS STUDY OF GAP-STATE PROFILES OF P-DOPED AND UNDOPED A-SI-H [J].

TANAKA, K ;

YAMASAKI, S .

SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :277-283

[10] DENSITY OF THE GAP STATES IN UNDOPED AND DOPED GLOW-DISCHARGE A-SI-H [J].

VANECEK, M ;

KOCKA, J ;

STUCHLIK, J ;

KOZISEK, Z ;

STIKA, O ;

TRISKA, A .

SOLAR ENERGY MATERIALS, 1983, 8 (04) :411-423

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