HIGH-POWER CW TRANSFERRED-ELECTRON OSCILLATORS

[1] BERSON BE, 1967, P C HIGH FREQUENCY P, P78

[2] ENSTROM RE, 1967, T METALL SOC AIME, V239, P413

[3] NARAYAN SY, 1969, ELECTRON LETT, V4, P504

[4] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &

[1] BERSON BE, 1967, P C HIGH FREQUENCY P, P78

[2] ENSTROM RE, 1967, T METALL SOC AIME, V239, P413

[3] NARAYAN SY, 1969, ELECTRON LETT, V4, P504

[4] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &