CRITICAL CURRENTS IN NB3GE BASED PSEUDO-BINARIES

被引：7

作者：

ALTEROVITZ, SA ^{[1
]}

WOOLLAM, JA ^{[1
]}

ENGELHARDT, JJ ^{[1
]}

WEBB, GW ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,INST PURE & APPL PHYS SCI,LA JOLLA,CA 92093

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1979年 / 15卷 / 01期

关键词：

D O I：

10.1109/TMAG.1979.1060255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have prepared Lb^Ge jhb^Ge^Lrax and NbjGe^Sn. on heated alumina substrates using CVD. Midresistive transitions were up to 2IK and transition widths were as low as 0,3K. Critical currents were measured to 22 Tesla at temperatures from 4.2K to 19K. Effective upper critical fields Bjxwere measured by extrapolating Jc vs J B data. Preliminary data show that for small Ga additions, 3 increased above the value at x=0. Flux pinning forces vs reduced field b=B/Bjxdo not obey scaling lav/s, which we explain as being due to inhomogeneous material having a distribution of Tc and BC3W values. © 1979 IEEE

引用

页码：512 / 515

页数：4

共 18 条

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