DEPENDENCE OF HOT CARRIER LUMINESCENCE ON BARRIER THICKNESS IN GAAS/ALGAAS SUPERLATTICES AND MULTIPLE QUANTUM-WELLS

被引：35

作者：

NOZIK, AJ

PARSONS, CA

DUNLAVY, DJ

KEYES, BM

AHRENKIEL, RK

机构：

[1] Solar Energy Research Institute, Golden, CO 80401

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 04期

关键词：

D O I：

10.1016/0038-1098(90)90900-V

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Time-integrated hot luminescence spectra have been obtained for 20-period GaAs/AlxGa1-xAs superlattices and multiple quantum wells with constant well widths and varying barrier thicknesses. Time-averaged hot electron temperatures were determined by fitting the tails of the emission spectra to a Boltzmann distribution. With strong miniband formation in superlattices hot electron cooling rates were found to be faster than in MQWs and to vary markedly between miniband samples. These results are believed to be related to the delocalization of carriers in the miniband regime, with concomitant increases in the probability for non-radiative quenching of hot electron emission at surfaces and interfaces. Bulk GaAs was found to have a much faster hot electron cooling rate compared to any of the quantized GaAs structures. © 1990.

引用

页码：297 / 301

页数：5

共 40 条

[1] HOT CARRIER INJECTION AT SEMICONDUCTOR-ELECTROLYTE JUNCTIONS [J].