HOT CARRIER INJECTION OF PHOTOGENERATED ELECTRONS AT INDIUM-PHOSPHIDE ELECTROLYTE INTERFACES

被引:68
作者
COOPER, G [1 ]
TURNER, JA [1 ]
PARKINSON, BA [1 ]
NOZIK, AJ [1 ]
机构
[1] SOLAR ENERGY RES INST,PHOTOCONVERS RES BRANCH,GOLDEN,CO 80401
关键词
D O I
10.1063/1.331928
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:6463 / 6473
页数:11
相关论文
共 26 条
[1]   ON THE ROLE OF SURFACE-STATES IN SEMICONDUCTOR ELECTRODE PHOTOELECTROCHEMICAL CELLS [J].
BARD, AJ ;
FAN, FRF ;
GIODA, AS ;
NAGASUBRAMANIAN, G ;
WHITE, HS .
FARADAY DISCUSSIONS, 1980, 70 :19-+
[2]   THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].
BARD, AJ ;
BOCARSLY, AB ;
FAN, FRF ;
WALTON, EG ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677
[3]   HOT CARRIER INJECTION AT SEMICONDUCTOR-ELECTROLYTE JUNCTIONS [J].
BOUDREAUX, DS ;
WILLIAMS, F ;
NOZIK, AJ .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2158-2163
[4]  
BUHKS E, 1981, PHOTOELECTROCHEMISTR
[5]  
ESCHER JS, 1981, SEMICONDUCTORS SEMIM, V15, P217
[6]  
FERRY DK, 1982, HDB SEMICONDUCTORS, V1
[7]  
HELLER A, 1981, APPL PHYS LETT, V387, P28
[8]   HOT-ELECTRONS IN LAYERED SEMICONDUCTORS [J].
HESS, K ;
HOLONYAK, N .
PHYSICS TODAY, 1980, 33 (10) :40-&
[9]   PHOTOELECTROCHEMICAL REACTIONS AND FORMATION OF INVERSION-LAYERS AT NORMAL-TYPE MOS2-ELECTRODES, MOSE2-ELECTRODES, AND WSE2-ELECTRODES IN APROTIC-SOLVENTS [J].
KAUTEK, W ;
GERISCHER, H .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (07) :645-653
[10]   SEMICONDUCTOR ELECTRODES .17. ELECTROCHEMICAL BEHAVIOR OF N-TYPE AND P-TYPE INP ELECTRODES IN ACETONITRILE SOLUTIONS [J].
KOHL, PA ;
BARD, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) :598-603