HOT-ELECTRONS IN LAYERED SEMICONDUCTORS

被引：18

作者：

HESS, K ^{[1
]}

HOLONYAK, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICS TODAY | 1980年 / 33卷 / 10期

关键词：

D O I：

10.1063/1.2913789

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：40 / &

共 19 条

[1]

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BERGSTRESSER, TK .

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[3]

Conwell E M, 1967, HIGH FIELD TRANSPORT

[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[5]

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[6]

ESAKI L, 1969, RC2418 IBM RES REP

[7] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].

HESS, K .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486

[8]

HESS K, 1979, SOLID STATE COMMUN, V30, P807, DOI 10.1016/0038-1098(79)90051-6

[9] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J].

HESS, K ;

MORKOC, H ;

SHICHIJO, H ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1979, 35 (06) :469-471

[10]

HESS K, 1980, PHYSICS NONLINEAR TR

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