HIGH-POWER 0.82-MU-M SUPERLUMINESCENT DIODES WITH EXTREMELY LOW FABRY-PEROT MODULATION DEPTH

被引：28

作者：

SAFIN, SA

SEMENOV, AT

SHIDLOVSKI, VR

ZHUCHKOV, NA

KURNYAVKO, YV

机构：

[1] JE Interface, USSR 123557 Moscow, Klimashkin str.

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

LUMINESCENT DEVICES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Superluminescent AlGaAs/GaAs diodes with 15 mW output power and 1% Fabry-Perot modulation depth and modules with 3 mW polarisation maintaining fibre output have been developed. At output powers of more than 8 mW the effect of saturation on power fluctuations was observed.

引用

页码：127 / 129

页数：3